New method gives robust transistors

New method gives robust transistors Linkoping, Sweden (SPX) Jan 08, 2020
A new method to fit together layers of semiconductors as thin as a few nanometres has resulted in not only a scientific discovery but also a new type of transistor for high-power electronic devices. The result, published in Applied Physics Letters, has aroused huge interest. The achievement is the result of a close collaboration between scientists at Linkoping University and SweGaN, a spin Source: